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portada Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors
Type
Physical Book
Publisher
Author
Year
2018
Language
English
Pages
252
Format
Hardcover
ISBN13
9781107162044
Edition No.
1
Categories

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Farzan Jazaeri; Jean-Michel Sallese (Author) · Cambridge University Press · Hardcover

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors - Farzan Jazaeri; Jean-Michel Sallese

New Book Imported to Taiwan
Delivery: 15 Jul - 23 Jul Shipping: 4 to 5 business days.
NT$ 6,095
NT$ 6,095

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Synopsis "Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors "

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

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