Tracked shipping to Taiwan with premium packaging for just NT$300 

Ship to
Taiwan
0

My Account

  • argentina
  • chile
  • colombia
  • españa
  • méxico
  • perú
  • estados unidos
  • internacional

menu

Select your country

Americas

Europe

Rest of the world

portada Variation-Aware Advanced CMOS Devices and Sram
Type
Physical Book
Author
Publisher
Language
English
Pages
140
Format
Hardcover
Dimensions
24.3 x 15.9 x 1.4 cm
Weight
0.43 kg.
ISBN13
9789401775953
Categories

Variation-Aware Advanced CMOS Devices and Sram

Changhwan Shin (Author) · Springer · Hardcover

Variation-Aware Advanced CMOS Devices and Sram - Shin, Changhwan

Cheaper New Book Imported to Taiwan
Delivery: 14 Aug - 28 Aug Shipping: 21 to 26 business days.
NT$ 1,864
Faster New Book Imported to Taiwan
Delivery: 04 Aug - 12 Aug Shipping: 13 to 14 business days.
NT$ 1,919
NT$ 1,864

Choose the list to add your product or create one New List

Go to My Wishlists
Calculate shipping cost

Synopsis "Variation-Aware Advanced CMOS Devices and Sram"

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development.This book aims to provide the reader with a deep understanding of the major random variation sources, and the characterization of each random variation source. Furthermore, the book presents various CMOS device designs to surmount the random variation in future CMOS technology, emphasizing the applications to SRAM.

Customers reviews

More customer reviews
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)
  • 0% (0)

Frequently Asked Questions about the Book

Is the book original?

All books in our catalog are Original.

In what language is the book written?

The book is written in English.

What is the format of this book?

The binding of this edition is Hardcover.

Questions and Answers about the Book

Do you have a question about the book? Login to be able to add your own question.

Opinions about Bookdelivery

More customer reviews