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portada Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications and Basic Properties
Type
Physical Book
Year
2003
Language
English
Pages
248
Format
Hardcover
Dimensions
25.5x17.2x2.2 cm
Weight
0.58 kg.
ISBN
9812382895
ISBN13
9789812382894

Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications and Basic Properties

Michael A. Stroscio (Author) · Mitra Dutta (Author) · World Scientific Publishing Company · Hardcover

Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications and Basic Properties - Stroscio, Michael A. ; Dutta, Mitra

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NT$ 8,765
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Synopsis "Advanced Semiconductor Heterostructures: Novel Devices, Potential Device Applications and Basic Properties"

This volume provides valuable summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of semiconductor heterostructures that has emerged since their original conception. As exemplified by the chapters in this book, recent progress on advanced semiconductor heterostructures spans a truly remarkable range of scientific fields with an associated diversity of applications. Some of these applications will undoubtedly revolutionize critically important facets of modern technology. At the heart of these advances is the ability to design and control the properties of semiconductor devices on the nanoscale. As an example, the intersubband lasers discussed in this book have a broad range of previously unobtainable characteristics and associated applications as a result of the nanoscale dimensional control of the underlying semiconductor heterostructures. As this book illustrates, an astounding variety of heterostructures can be fabricated with current technology; the potentially widespread use of layered quantum dots fabricated with nanoscale precision in biological applications opens up exciting advances in medicine. In addition, many more excellent examples of the remarkable impact being made through the use of semiconductor heterostructures are given. The summaries in this volume provide timely insights into what we know now about selected areas of advanced semiconductor heterostructures and also provide foundations for further developments.

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